Journal
ACS ENERGY LETTERS
Volume 6, Issue 12, Pages 4209-4219Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.1c01898
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Funding
- High-Level Talents of Yunnan University [CZ21623201]
- National Natural Science Foundation of China [22065038]
- Key Project of Natural Science Foundation of Yunnan [KC10110419]
- High-Level Talents Introduction in Yunnan Province [C619300A010]
- Fund for Excellent Young Scholars of Yunnan [K264202006820]
- Program for Excellent Young Talents of Yunnan University and Major Science [C176220200]
- International Joint Research Center for Advanced Energy Materials of Yunnan Province [202003AE140001]
- Technology Project of Precious Metal Materials Genetic Engineering in Yunnan Province [2019Z E001-1, 202002AB080001]
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Minimizing interfacial defects and improving charge transferability by employing a highly crystalline small molecule, C8-BTBT, can enhance the efficiency and stability of perovskite solar cells. This strategy reduces aggregates and improves charge carrier management, leading to over a 2% absolute efficiency improvement in devices. The thermal tolerance of C8-BTBT-modified Spiro-OMeTAD opens up possibilities for enhancing the performance of perovskite optoelectronics.
Minimizing the interfacial defects and improving the charge transferability of charge-transfer layers have become the most important strategies to boost the efficiency and stability of perovskite solar cells. However, most molecular passivators currently employed to alleviate interfacial defects generate poorly conductive aggregates at the interfaces, hindering the extraction of charge carriers. Here, a holistic interface engineering strategy employing a highly crystalline small molecule of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) is reported. We reveal that C8-BTBT bridges the perovskite film to the hole-transporting layer with reduced interfacial defects and improved charge carrier management. Moreover, such interfacial modification with air-stable C8-BTBT achieves a desirable and robust morphology of Spiro-OMeTAD by reducing the aggregates. Accordingly, C8-BTBT-treated devices exhibit a great enhancement to all photovoltaic performance characteristics with an absolute efficiency improvement exceeding 2%. The C8-BTBT-modified Spiro-OMeTAD enables decent thermal tolerance, which paves the way for enhancing the performance of Spiro-OMeTAD-based perovskite optoelectronics.
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