Chemical Vapor Deposition and Thermal Oxidation of Cuprous Phosphide Nanofilm

Inorganic semiconductors usually show n-type characterization; the development of p-type inorganic semiconductor material will provide more opportunities for novel devices. In this paper, we investigated the chemical vapor deposition (CVD) of p-type cuprous phosphide (Cu3P) nanofilm and studied its thermal oxidation behavior. Cu3P film was characterized by optical microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), laser Raman spectroscopy (Raman), and fluorescence spectroscopy (PL). We found that the thickness of film ranged from 4 to 10 nm, and the film is unstable at temperatures higher than room temperature in air. We provide a way to prepare inorganic phosphide nanofilms. In addition, the possible thermal oxidation should be taken into consideration for practical application.

Automated summary

This paper investigates the CVD synthesis and thermal oxidation behavior of p-type inorganic semiconductor material Cu3P. The study provides insights into the preparation of inorganic phosphide nanofilms and highlights the importance of considering thermal oxidation for practical applications.