Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

Thin-film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on a larger scale. In addition, combinations with other materials have enabled the development of sensor applications or neuromorphic devices in recent years. Here, this paper provides a timely overview of metal-oxide-based thin-film transistors focusing on emerging applications, including flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic devices. This overview also revisits recent efforts on metal oxide-based thin-film transistors developed with high compatibility for integration to newly reported applications.

Automated summary

Thin-film transistors using metal oxides have been extensively studied for their high transparency, large area, and mass production capabilities. They are compatible with conventional semiconductor processes and can be used in flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic devices. Recent efforts have focused on developing metal oxide-based thin-film transistors with high compatibility for integration into newly reported applications.