Journal
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
Volume 15, Issue -, Pages 460-467Publisher
ELSEVIER
DOI: 10.1016/j.jmrt.2021.08.043
Keywords
SiCN thin Films; Photoelectric properties; Magnetron sputtering
Funding
- Scientific Research Plan Projects of Shaanxi Education Department [18JK0780, 12JK0532]
- National Key Research and Development Program of China [2019YFC1520904]
- Key Program for International Science and Technology Cooperation Projects of Shaanxi Province [2018KWZ-08]
- National Natural Science Foundation of China [61804125, 61701402]
- Northwestern Polytechnical University [19SH020159, 19SH020123]
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SiCN thin films were prepared by radio frequency reactive magnetron sputtering method under different conditions, and their microstructure, morphology, optical, and field emission properties were studied. It was found that the high-quality SiCN thin films can be tailored by the preparation conditions, showing potential for optoelectronic device development.
SiCN thin film is one of the most attractive silicon-based materials due to its excellent electrical, mechanical and optical properties. In this study, SiCN thin films have been prepared by the radio frequency reactive magnetron sputtering method under different sputtering power, pressure, and substrate temperature. The microstructure, morphology, and the optical and field emission properties of SiCN thin films were performed. The results indicated that the high-quality SiCN thin films have been successfully prepared and it is proved that these properties can be tailored by the preparation conditions. A main near ultraviolet light emission line at around 370 nm in SiCN thin films makes it suitable for the development of optoelectronic devices. This study can provide novel guidance for the controlled preparation of high-quality SiCN thin films by magnetron sputtering. (c) 2021 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
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