Journal
MATERIALS & DESIGN
Volume 212, Issue -, Pages -Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.matdes.2021.110185
Keywords
Van der Waals; Molybdenum disulphide; Zinc oxide; Self-powered photodetector
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Funding
- Starting Research Fund from Songshan Lake Materials Laboratory
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This study demonstrates a simple way to engineer a photodetector based on a MoSe2/ZnO heterojunction, achieving an atomically sharp n-n junction with current rectification behavior. The photodetector exhibits a fast photoresponse speed and a high peak responsivity.
Recently, n-n junction with large bandgap offset has been reported to be able to realize rectifier function and improve photoresponse in optoelectronic applications. In this work, we demonstrate a simple way to engineer photodetector based on a MoSe2/ZnO heterojunction. ZnO thin film deposited by DC magnetron sputtering and mechanically exfoliated MoSe2 was coupled to form vertical stacking heterostructure. An atomically sharp n-n junction with type-II band alignment and current rectification behaviour is realised. The MoSe2/ZnO based photodetector exhibits a fast photoresponse speed of 40 ls, and a peak responsivity of 2.7 A/W. It is also demonstrated that the MoSe2/ZnO photodiode can operate under self-powered mode over a broad spectrum. (C) 2021 Published by Elsevier Ltd.
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