Journal
RESULTS IN PHYSICS
Volume 29, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.rinp.2021.104686
Keywords
Anomalous Hall effect; Scaling relation; Ferromagnetic semiconductor; Carrier dependent
Funding
- Natural Science Foundation of Shandong province [ZR2019MA023]
- National Natural Science Foundation of China [12074216, 11374189, 91536105, 11174186, 51231007]
- 111 Project [B13029]
- State Key Project of Fundamental Research of China [2015CB921402]
- Tianshan Scholar Program
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An unconventional carrier-dependent anomalous Hall effect is reported in ferromagnetic semiconductor (ZnCo)O films, exhibiting a quadratic scaling relation. The separation of the effect from the nonlinear ordinary Hall effect is shown to be necessary for proper scaling. Interestingly, a quadratic scaling relation between anomalous Hall conductivity and longitudinal conductivity is obtained.
We report an unconventional carrier-dependent anomalous Hall effect (AHE) with a quadratic scaling relation in epitaxial films of a ferromagnetic semiconductor (ZnCo)O with a high Co concentration. We show the co-existence of AHE together with the nonlinear ordinary Hall effect (NLHE) and the separation of NLHE by using a two-conducting channels model in the expression of Hall resistivity. We found that the NLHE depends strongly on both temperature and carrier density n and dominates at low temperature when n <1.0x10(20)cm(-3), indicating the very necessary of separation them from each other for a proper scaling of the AHE. The anomalous Hall resistivity is nearly independent on carrier density and longitudinal resistivity regardless the underlying transport mechanisms and thermal properties. Very interestingly, a quadratic scaling relation between anomalous Hall conductivity and longitudinal conductivity sigma(AHE)(xy) proportional to sigma(2)(xx) is obtained. The further analysis shows that sigma(AHE)(xy) proportional to n(2) with a frozen electron mobility. In addition, sign reversal of the AHE has been observed by reducing magnetization via growth controlling engineering. Our results reveal a carrier-dependent AHE in low conductivity regime and provide an experimental evidence for the itinerant ferromagnetism in ferromagnetic semiconductor (ZnCo)O.
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