Journal
RESULTS IN PHYSICS
Volume 31, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.rinp.2021.105018
Keywords
Silicon nanowires; Maskless method; Exciton generation rate; Metal-assisted chemical etching; Antireflection film
Funding
- National Natural Science Foundation of China [.61804169]
- Na-tional Key Research and Development Program of China [2017YFA0206002]
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A novel and facile scheme for fabricating highly uniform vertically aligned silicon nanowires (Si-NWs) arrays was presented, demonstrated numerically with excellent properties. The method involves fabricating thin gold (Au) nanostructures using magnetron sputtering followed by metal-assisted chemical etching at low temperature to achieve wafer-scale and highly uniform Si-NWs arrays. The Si-NWs arrays showed promising photoelectric conversion performance, with a maximum exciton generation rate of 1.76 x 10(24) and a reflectivity below 10% over a wide wavelength range at an annealing temperature of 200 degrees C.
We present a novel and facile scheme for fabricating wafer-scale arrays of highly uniform vertically aligned silicon nanowires (Si-NWs) in the diameter range of 50 to 200 nm. The key idea is to fabricate thin gold (Au) nanostructures using magnetron sputtering followed by de-wetting of Au and subsequent realization of wafer-scale and highly uniform Si-NWs arrays by metal-assisted chemical etching in low temperature (2 degrees C) without resorting to complex photolithography. The excellent properties of these Si-NWs arrays were also demonstrated numerically. A maximum exciton generation rate of 1.76 x 10(24) and a maximum energy generation rate of 28 can be obtained from Si-NWs arrays with the diameter of 200 nm. The reflectivity of the Si-NWs arrays is declined with decreasing annealing temperature and is below 10% over a wide wavelength range at the annealing temperature of 200 degrees C. Our work provides a promising approach for constructing Si-NWs arrays with good photoelectric conversion performance.
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