Related references
Note: Only part of the references are listed.High efficiency InGaN nanowire tunnel junction green micro-LEDs
Xianhe Liu et al.
APPLIED PHYSICS LETTERS (2021)
Two-dimensional multicolor (RGBY) integrated nanocolumn micro-LEDs as a fundamental technology of micro-LED display
Katsumi Kishino et al.
APPLIED PHYSICS EXPRESS (2020)
Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1μm in diameter
Jordan M. Smith et al.
APPLIED PHYSICS LETTERS (2020)
Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate
Jiao-Xin Guo et al.
CHINESE PHYSICS B (2020)
Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line Width
Jie Bai et al.
ACS NANO (2020)
Micrometer scale InGaN green light emitting diodes with ultra-stable operation
Xianhe Liu et al.
APPLIED PHYSICS LETTERS (2020)
Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation
Ryan T. Ley et al.
APPLIED PHYSICS LETTERS (2020)
Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams
Akira Uedono et al.
JOURNAL OF APPLIED PHYSICS (2020)
Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide-Bandgap Semiconductors
Yuanpeng Wu et al.
ADVANCED ELECTRONIC MATERIALS (2020)
UV LEDs based on p-i-n core-shell AlGaN/GaN nanowire heterostructures grown by N-polar selective area epitaxy
Matt D. Brubaker et al.
NANOTECHNOLOGY (2019)
Active Matrix Monolithic LED Micro-Display Using GaN-on-Si Epilayers
Xu Zhang et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2019)
Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template
Hongjian Li et al.
OPTICS EXPRESS (2019)
Multisite microLED optrode array for neural interfacing
Niall McAlinden et al.
Neurophotonics (2019)
Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers
Syed Ahmed Al Muyeed et al.
JOURNAL OF APPLIED PHYSICS (2019)
Mini-LED and Micro-LED: Promising Candidates for the Next Generation Display Technology
Tingzhu Wu et al.
APPLIED SCIENCES-BASEL (2018)
Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD
P. P. Li et al.
OPTICS EXPRESS (2018)
Core-shell p-i-n GaN nanowire LEDs by N-polar selective area growth
Matt D. Brubaker et al.
LOW-DIMENSIONAL MATERIALS AND DEVICES (2018)
Influence of size-reduction on the performances of GaN-based micro-LEDs for display application
Francois Olivier et al.
JOURNAL OF LUMINESCENCE (2017)
Selective area epitaxy of AlGaN nanowire arrays across nearly the entire compositional range for deep ultraviolet photonics
Xianhe Liu et al.
OPTICS EXPRESS (2017)
Internal quantum efficiency and Auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction
Thi Huong Ngo et al.
SUPERLATTICES AND MICROSTRUCTURES (2017)
InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters
Chao Zhao et al.
RSC ADVANCES (2017)
High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated β-Ga2O3Substrate
Mufasila M. Muhammed et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study
Francois Olivier et al.
APPLIED PHYSICS LETTERS (2017)
Sustained high external quantum efficiency in ultrasmall blue III-nitride micro-LEDs
David Hwang et al.
APPLIED PHYSICS EXPRESS (2017)
On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures
Nhung Hong Tran et al.
APPLIED PHYSICS LETTERS (2017)
Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy
Matt D. Brubaker et al.
CRYSTAL GROWTH & DESIGN (2016)
Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy
C. D. Pynn et al.
APPLIED PHYSICS LETTERS (2016)
Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction
B. P. Yonkee et al.
APPLIED PHYSICS LETTERS (2016)
Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers
Shigeya Kimura et al.
JOURNAL OF APPLIED PHYSICS (2016)
Full-Color Pixelated-Addressable Light Emitting Diode on Transparent Substrate (LEDoTS) Micro-Displays by CoB
Deng Peng et al.
JOURNAL OF DISPLAY TECHNOLOGY (2016)
Full-Color Single Nanowire Pixels for Projection Displays
Yong-Ho Ra et al.
NANO LETTERS (2016)
High luminous efficacy green light-emitting diodes with AlGaN cap layer
Abdullah I. Alhassan et al.
OPTICS EXPRESS (2016)
Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission
T. Wang
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)
Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation
Christophe A. Hurni et al.
APPLIED PHYSICS LETTERS (2015)
GaN-based LED micro-displays for wearable applications
Zhaojun Liu et al.
MICROELECTRONIC ENGINEERING (2015)
Atomic Ordering in InGaN Alloys within Nanowire Heterostructures
Steffi Y. Woo et al.
NANO LETTERS (2015)
Formation Mechanisms of GaN Nanowires Grown by Selective Area Growth Homoepitaxy
Zarko Gacevic et al.
NANO LETTERS (2015)
Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes
S. M. Sadaf et al.
NANO LETTERS (2015)
Three-Dimensional Quantum Confinement of Charge Carriers in Self-Organized AlGaN Nanowires: A Viable Route to Electrically Injected Deep Ultraviolet Lasers
S. Zhao et al.
NANO LETTERS (2015)
Selective-area growth of GaN nanocolumns on Si(111) substrates for application to nanocolumn emitters with systematic analysis of dislocation filtering effect of nanocolumns
Katsumi Kishino et al.
NANOTECHNOLOGY (2015)
Semiconductor Nanowire Light-Emitting Diodes Grown on Metal: A Direction Toward Large-Scale Fabrication of Nanowire Devices
A. T. M. Golam Sarwar et al.
SMALL (2015)
Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers
Hieu Pham Trung Nguyen et al.
SCIENTIFIC REPORTS (2015)
Low defect large area semi-polar (11(2)over-bar2) GaN grown on patterned (113) silicon
Markus Pristovsek et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2015)
Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption
Chunhua Du et al.
APPLIED PHYSICS LETTERS (2014)
Green-Light Nanocolumn Light Emitting Diodes With Triangular-Lattice Uniform Arrays of InGaN-Based Nanocolumns
Katsumi Kishino et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2014)
A 3-Gb/s Single-LED OFDM-Based Wireless VLC Link Using a Gallium Nitride μLED
Dobroslav Tsonev et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2014)
An electrically driven quantum dot-in-nanowire visible single photon source operating up to 150K
Saniya Deshpande et al.
APPLIED PHYSICS LETTERS (2013)
Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma
Masaki Minami et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes
Hieu Pham Trung Nguyen et al.
NANO LETTERS (2013)
Group III nitride core-shell nano- and microrods for optoelectronic applications
Martin Mandl et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2013)
Carrier lifetimes in green emitting InGaN/GaN disks-in-nanowire and characteristics of green light emitting diodes
Shafat Jahangir et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 5 (2013)
Nitride micro-LEDs and beyond - a decade progress review
H. X. Jiang et al.
OPTICS EXPRESS (2013)
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes
F. Akyol et al.
APPLIED PHYSICS LETTERS (2012)
Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon
Hieu Pham Trung Nguyen et al.
NANOTECHNOLOGY (2012)
Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate
Tomonari Shioda et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2012)
p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111)
H. P. T. Nguyen et al.
NANO LETTERS (2011)
Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon
Hieu Pham Trung Nguyen et al.
NANOTECHNOLOGY (2011)
Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)
Karine Hestroffer et al.
PHYSICAL REVIEW B (2011)
High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20(2)over-bar1) GaN Substrates
Shuichiro Yamamoto et al.
APPLIED PHYSICS EXPRESS (2010)
Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate
Hiroto Sekiguchi et al.
APPLIED PHYSICS LETTERS (2010)
White light emitting diodes with super-high luminous efficacy
Yukio Narukawa et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2010)
Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy
Wei Guo et al.
NANO LETTERS (2010)
Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays
Katsumi Kishino et al.
JOURNAL OF CRYSTAL GROWTH (2009)
III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
Jonathan J. Wierer et al.
NATURE PHOTONICS (2009)
Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns
Hiroto Sekiguchi et al.
APPLIED PHYSICS EXPRESS (2008)
Optical properties of yellow light-emitting diodes grown on semipolar (11(2)over-bar2) bulk GaN substrates
Hitoshi Sato et al.
APPLIED PHYSICS LETTERS (2008)
Application of blue-green and ultraviolet micro-LEDs to biological imaging and detection
H. Xu et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2008)
Improvement of luminous efficiency in white light emitting diodes by reducing a forward-bias voltage
Yukio Narukawa et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2007)
Ultra-high efficiency white light emitting diodes
Yukio Narukawa et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2006)
Inductively coupled plasma-induced etch damage of GaN p-n junctions
RJ Shul et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS (2000)
Share Paper
