Journal
CRYSTALS
Volume 11, Issue 12, Pages -Publisher
MDPI
DOI: 10.3390/cryst11121563
Keywords
GaN; semipolar; {2021}; epitaxial lateral overgrowth; laser diode; defects; recycling; nitride semiconductor
Funding
- Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara
- DARPA [HR001120C013]
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Research showed that edge-emitting laser diodes fabricated on a reduced dislocation density epitaxial lateral overgrown wing can achieve laser action. Two types of facet feasibility studies were conducted, with results showing that facet LDs formed on wafers through reactive ion etching demonstrated laser action.
Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial lateral overgrown (ELO) wing of a semipolar {202 over bar 1} GaN substrate, termed an ELO wing LD. Two types of facet feasibility studies were conducted: (1) handmade facets, wherein lifted-off ELO wing LDs were cleaved manually, and (2) facets formed on wafers through reactive ion etching (RIE). Pulsed operation electrical and optical measurements confirmed the laser action in the RIE facet LDs with a threshold current of ~19 kAcm(-2) and maximum light output power of 20 mW from a single uncoated facet. Handmade facet devices showed spontaneous, LED-like emission, confirming device layers remain intact after mechanical liftoff.
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