4.6 Article

One-Step Formation of Reduced Graphene Oxide from Insulating Polymers Induced by Laser Writing Method

Journal

CRYSTALS
Volume 11, Issue 11, Pages -

Publisher

MDPI
DOI: 10.3390/cryst11111308

Keywords

reduced graphene oxide; UV laser annealing; PTFE; PBI; insulating polymers

Funding

  1. National Science Foundation [1836767, ECCS-2025064]
  2. state of North Carolina
  3. Bulgarian Ministry of Education and Science [DO1-385/15.12.2020]
  4. Center of competence HITMOBIL-Technologies and systems for generation, storage and consumption of clean energy - Operational Programme Science and Education For Smart Growth 2014-2020 [BG05M2OP001-1.002-0014]
  5. EU from the European Regional Development Fund
  6. Div Of Chem, Bioeng, Env, & Transp Sys
  7. Directorate For Engineering [1836767] Funding Source: National Science Foundation

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The successful formation of reduced graphene oxide (rGO) from two electrically insulating polymers using excimer pulsed laser annealing method was reported. The mechanisms for the transformation of the polymers into rGO were investigated. This approach has potential for creating selective polymer-written electronics in the future.
Finding a low-cost and effective method at low temperatures for producing reduced graphene oxide (rGO) has been the focus of many efforts in the research community for almost two decades. Overall, rGO is a promising candidate for use in supercapacitors, batteries, biosensors, photovoltaic devices, corrosion inhibitors, and optical devices. Herein, we report the formation of rGO from two electrically insulating polymers, polytetrafluoroethylene (PTFE) and meta-polybenzimidazole fiber (m-PBI), using an excimer pulsed laser annealing (PLA) method. The results from X-ray diffraction, scanning electron microscopy, electron backscattered diffraction, Raman spectroscopy, and Fourier-transform infrared spectroscopy confirm the successful generation of rGO with the formation of a multilayered structure. We investigated the mechanisms for the transformation of PTFE and PBI into rGO. The PTFE transition occurs by both a photochemical mechanism and a photothermal mechanism. The transition of PBI is dominated by a photo-oxidation mechanism and stepwise thermal degradation. After degradation and degassing procedures, both the polymers leave behind free molten carbon with some oxygen and hydrogen content. The free molten carbon undergoes an undercooling process with a regrowth velocity (< 4 m & BULL;s(-1)) that is necessary for the formation of rGO structures. This approach has the potential for use in creating future selective polymer-written electronics.

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