Comprehensive Study and Optimization of Implementing p-NiO in beta-Ga2O3 Based Diodes via TCAD Simulation

In this paper, we carried out a comprehensive study and optimization of implementing p-NiO in the beta-Ga2O3 based diodes, including Schottky barrier diode (SBD) with p-NiO guard ring (GR), p-NiO/beta-Ga2O3 heterojunction (HJ) barrier Schottky (HJBS) diode, and HJ-PN diode through the TCAD simulation. In particular, we provide design guidelines for future p-NiO-related Ga2O3 diodes with material doping concentrations and dimensions to be taken into account. Although HJ-PN has a similar to 1 V higher turn-on voltage (V-on), its breakdown voltage (BV) is the highest among all diodes. We found that for SBD with p-NiO GRs and HJBS, their forward electrical characteristics and reverse leakage current are related to the total width and the doping concentration of p-NiO, the BV is only related to the doping concentration of p-NiO, and the optimal doping concentration of p-NiO is found to be 4 x 10(17) cm(-3). Compared with the SBD without p-NiO, the BV of the SBD with p-NiO and HJBS diode can be essentially improved by 3 times. As a result, HJ-PN diode, SBD with p-NiO GRs, and HJ-BS diode achieve a BV/specific on-resistance (R-on,R-sp) of 5705 V/4.3 m Omega center dot cm(2), 3006 V/3.07 m Omega center dot cm(2), and 3004 V/3.06 m Omega center dot cm(2), respectively. Based on different application requirements, this work provides a useful insight about the diode selection with various structures.

Automated summary

This study comprehensively investigates and optimizes the implementation of p-NiO in beta-Ga2O3-based diodes through TCAD simulation, providing design guidelines for future Ga2O3 diodes. The findings suggest that adjusting the doping concentration and dimensions of p-NiO can significantly improve the breakdown voltage of the diode.