Related references
Note: Only part of the references are listed.Deep-level defects in gallium oxide
Zhengpeng Wang et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)
Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE
S. Bin Anooz et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)
Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides
Zbigniew Galazka et al.
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS (2021)
The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices
Kai Fu et al.
APPLIED PHYSICS LETTERS (2021)
Ge doping of β-Ga2O3 by MOCVD
Fikadu Alema et al.
APL MATERIALS (2021)
Robust random forest based non-fullerene organic solar cells efficiency prediction
Min-Hsuan Lee
ORGANIC ELECTRONICS (2020)
Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE
S. Bin Anooz et al.
APPLIED PHYSICS LETTERS (2020)
Point defects in Ga2O3
Matthew D. McCluskey
JOURNAL OF APPLIED PHYSICS (2020)
Probing Charge Transport and Background Doping in Metal-Organic Chemical Vapor Deposition-Grown (010) β-Ga2O3
Zixuan Feng et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2020)
Low temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window
Arkka Bhattacharyya et al.
APPLIED PHYSICS LETTERS (2020)
Structural and electronic properties of Si- and Sn-doped (-201) β-Ga2O3annealed in nitrogen and oxygen atmospheres
Marko J. Tadjer et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)
Offcut-related step-flow and growth rate enhancement during (100) β-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)
Piero Mazzolini et al.
APPLIED PHYSICS LETTERS (2020)
Machine learning in chemical reaction space
Sina Stocker et al.
NATURE COMMUNICATIONS (2020)
Step-flow growth in homoepitaxy of β-Ga2O3 (100)-The influence of the miscut direction and faceting
R. Schewski et al.
APL MATERIALS (2019)
Deep acceptors and their diffusion in Ga2O3
Hartwin Peelaers et al.
APL MATERIALS (2019)
MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
Zixuan Feng et al.
APPLIED PHYSICS LETTERS (2019)
Machine Learning Optimization of p-Type Transparent Conducting Films
Lingfei Wei et al.
CHEMISTRY OF MATERIALS (2019)
Fast forecasting of VGF crystal growth process by dynamic neural networks
Natasha Dropka et al.
JOURNAL OF CRYSTAL GROWTH (2019)
Recent advances and applications of machine learning in solid-state materials science
Jonathan Schmidt et al.
NPJ COMPUTATIONAL MATERIALS (2019)
Machine-learning-assisted thin-film growth: Bayesian optimization in molecular beam epitaxy of SrRuO3 thin films
Yuki K. Wakabayashi et al.
APL MATERIALS (2019)
Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3
Fikadu Alema et al.
APL MATERIALS (2019)
Ga vacancies and electrical compensation in β-Ga2O3 thin films studied with positron annihilation spectroscopy
Filip Tuomisto et al.
OXIDE-BASED MATERIALS AND DEVICES X (2019)
Review-Theory and Characterization of Doping and Defects in β-Ga2O3
Marko J. Tadjer et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2019)
Quantum Machine Learning in Chemical Compound Space
O. Anatole von Lilienfeld
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION (2018)
Structure and vibrational properties of the dominant O-H center in β-Ga2O3
Philip Weiser et al.
APPLIED PHYSICS LETTERS (2018)
A Deep Neural Network Model using Random Forest to Extract Feature Representation for Gene Expression Data Classification
Yunchuan Kong et al.
SCIENTIFIC REPORTS (2018)
High-speed prediction of computational fluid dynamics simulation in crystal growth
Yosuke Tsunooka et al.
CRYSTENGCOMM (2018)
Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method
Zbigniew Galazka et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates
Michele Baldini et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy
A. Fiedler et al.
JOURNAL OF APPLIED PHYSICS (2017)
Optimization of magnetically driven directional solidification of silicon using artificial neural networks and Gaussian process models
Natasha Dropka et al.
JOURNAL OF CRYSTAL GROWTH (2017)
Fast growth rate of epitaxial β-Ga2O3 by close coupled showerhead MOCVD
Fikadu Alema et al.
JOURNAL OF CRYSTAL GROWTH (2017)
Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices
Adam T. Neal et al.
SCIENTIFIC REPORTS (2017)
Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
Elaheh Ahmadi et al.
APPLIED PHYSICS EXPRESS (2017)
The effect of sub-oxide phases on the transparency of tin-doped gallium oxide
K. Lim et al.
APPLIED PHYSICS LETTERS (2016)
High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
Akito Kuramata et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air
K. Hoshikawa et al.
JOURNAL OF CRYSTAL GROWTH (2016)
Electrical compensation by Ga vacancies in Ga2O3 thin films
E. Korhonen et al.
APPLIED PHYSICS LETTERS (2015)
Assessment and Validation of Machine Learning Methods for Predicting Molecular Atomization Energies
Katja Hansen et al.
JOURNAL OF CHEMICAL THEORY AND COMPUTATION (2013)
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2012)
Classification with correlated features: unreliability of feature ranking and solutions
Laura Tolosi et al.
BIOINFORMATICS (2011)
Hydrogenated cation vacancies in semiconducting oxides
J. B. Varley et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2011)
Oxygen vacancies and donor impurities in β-Ga2O3
J. B. Varley et al.
APPLIED PHYSICS LETTERS (2010)
Variable selection for large p small n regression models with incomplete data:: Mapping QTL with epistases
Min Zhang et al.
BMC BIOINFORMATICS (2008)
Conditional variable importance for random forests
Carolin Strobl et al.
BMC BIOINFORMATICS (2008)
Homoepitaxial growth rate measurement using in situ reflectance anisotropy spectroscopy
Christian Kaspari et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Large-size β-Ga2O3 single crystals and wafers
EG Víllora et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Illuminating the black box: a randomization approach for understanding variable contributions in artificial neural networks
JD Olden et al.
ECOLOGICAL MODELLING (2002)