β-Ga2O3 Used as a Saturable Sbsorber to Realize Passively Q-Switched Laser Output

beta-Ga2O3 crystals have attracted great attention in the fields of photonics and photoelectronics because of their ultrawide band gap and high thermal conductivity. Here, a pure beta-Ga2O3 crystal was successfully grown by the optical floating zone (OFZ) method, and was used as a saturable absorber to realize a passively Q-switched all-solid-state 1 mu m laser for the first time. By placing the as-grown beta-Ga2O3 crystal into the resonator of the Nd:GYAP solid-state laser, Q-switched pulses at the center wavelength of 1080.4 nm are generated under a output coupling of 10%. The maximum output power is 191.5 mW, while the shortest pulse width is 606.54 ns, and the maximum repetition frequency is 344.06 kHz. The maximum pulse energy and peak power are 0.567 mu J and 0.93 W, respectively. Our experimental results show that the beta-Ga2O3 crystal has great potential in the development of an all-solid-state 1 mu m pulsed laser.

Automated summary

In this study, a pure beta-Ga2O3 crystal was successfully grown using the optical floating zone method, and utilized as a saturable absorber for the first time to achieve a passively Q-switched all-solid-state 1 μm laser. The experimental results demonstrate the great potential of beta-Ga2O3 crystal in the development of all-solid-state 1 μm pulsed lasers.