Journal
APPLIED SCIENCES-BASEL
Volume 12, Issue 1, Pages -Publisher
MDPI
DOI: 10.3390/app12010392
Keywords
nc-SiOx; passivation characteristics; TOPCon solar cells; interface trap density
Categories
Funding
- New and Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Korean Ministry of Trade, Industry and Energy (MOTIE) [20203030010310, 20213030010240]
- Korea Institute of Energy Technology Evaluation & Planning (KETEP) [20213030010240, 20203030010310] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this study, we investigated the tunnel oxide passivated contact (TOPCon) using a crystalline nanostructured silicon-based layer through experimental and numerical simulation approaches. Our results demonstrated that the passivating contact with an ultra-thin silicon oxide capped with a thick nanocrystalline silicon oxide provides outstanding passivation properties, leading to improved performance of the solar cells.
We report on the tunnel oxide passivated contact (TOPCon) using a crystalline nanostructured silicon-based layer via an experimental and numerical simulation study. The minority carrier lifetime and implied open-circuit voltage reveals an ameliorated passivation property, which gives the motivation to run a simulation. The passivating contact of an ultra-thin silicon oxide (1.2 nm) capped with a plasma enhanced chemical vapor deposition (PECVD) grown 30 nm thick nanocrystalline silicon oxide (nc-SiOx), provides outstanding passivation properties with low recombination current density (J(o)) (~1.1 fA/cm(2)) at a 950 degrees C annealing temperature. The existence of a thin silicon oxide layer (SiO2) at the rear surface with superior quality (low pinhole density, D-ph < 1 x 10(-8) and low interface trap density, D-it approximate to 1 x 10(8) cm(-2) eV(-1)), reduces the recombination of the carriers. The start of a small number of transports by pinholes improves the fill factor (FF) up to 83%, reduces the series resistance (Rs) up to 0.5 omega cm(2), and also improves the power conversion efficiency (PEC) by up to 27.4%. The TOPCon with a modified nc-SiOx exhibits a dominant open circuit voltage (V-oc) of 761 mV with a supreme FF of 83%. Our simulation provides an excellent match with the experimental results and supports excellent passivation properties. Overall, our study proposed an ameliorated knowledge about tunnel oxide, doping in the nc-SiOx layer, and additionally about the surface recombination velocity (SRV) impact on TOPCon solar cells.
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