Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ=2323 S cm-1

Conductive homoepitaxial Si-doped beta-Ga2O3 films were fabricated by pulsed laser deposition with an as-deposited 2323 S cm(-1) conductivity (resistivity = 4.3 x 10(-4) ?-cm, carrier concentration = 2.24 x 10(20) cm(,)(-3) mobility = 64.5 cm(2) V-1 s(-1), and electrical activation efficiency = 77%). High quality homoepitaxial films deposited on commercial (010) Fe-compensated b-Ga2O substrates were determined by high-resolution transmission electron microscopy and x-ray diffraction. The b-Ga2O3 films have & SIM;70% transparency from 3.7 eV (335 nm) to 0.56 eV (2214 nm). The combination of high conductivity and transparency offers promise for numerous ultrawide bandgap electronics and optoelectronic applications.(C)2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(http://creativecommons.org/licenses/by/4.0/)

Automated summary

This study successfully synthesized conductive Si-doped beta-Ga2O3 homoepitaxial films with high transparency and promising applications using pulsed laser deposition.