Journal
ADVANCED ELECTRONIC MATERIALS
Volume 8, Issue 4, Pages -Publisher
WILEY
DOI: 10.1002/aelm.202101099
Keywords
2D layered materials; electronic memristor; neuromorphic computing; photoelectronic memristor; visual neural network
Funding
- National Natural Science Foundation of China [U20A20244, 51972041, 52002050]
- Sichuan Science and Technology Program [2021JDTD0010]
- Fundamental Research Fund for the Central Universities [ZYGX2020J004]
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This article reviews the recent advances in 2D electronic and photoelectronic memristors, discusses their applications in simulating artificial brain neural networks and visual neural networks, and provides an overview of the challenges and perspectives in the exploration of 2D materials for memristors.
Next-generation memristive devices and neuromorphic computing have many fantastic properties in breaking down the memory walls of conventional von Neumann structures. Electronic and photoelectronic memristors are the most important basic components, equipping with the capability of data storage and information processing for electronic and photoelectronic signals. 2D layered materials exhibit many unique physical advantages such as novel mechanisms, ultrathin channel, high mechanical flexibility, and easy electrical control, and thus demonstrate great potential for memory with high density, fast speed, and low power consumption. In recent years, abundant and fruitful designs have been devoted in terms of 2D memristors. Herein, the recent advances of 2D electronic and photoelectronic memristors are reviewed, as well as the application on simulating artificial brain neural network and visual neural network, respectively. An overview of the challenges and perspectives on the exploitation of 2D materials for memristors is given, and routes to realize practical brain and visual neural network are proposed.
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