4.5 Article

Giant Electrical Modulation of Terahertz Emission in Pb(Mg1/3Nb2/3)0.7Ti0.3O3/Co-Fe-B/Pt Structure

Journal

PHYSICAL REVIEW APPLIED
Volume 16, Issue 5, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.16.054011

Keywords

-

Funding

  1. National Natural Science Foundation of China [11704373, 12004366]
  2. National Key R&D Program of China [2020YFA0710100]
  3. Fun-damental Research Funds for the Central Universities [WK2340000071]
  4. Key Research and Development Program of Anhui Province [202104a05020012]
  5. Anhui Initiative in Quantum Information Technologies [AHY100000]

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This research introduces an electric field-controlled spintronic THz emitter based on ferroelectric-ferromagnetic/nonmagnetic structure, allowing THz radiation emission with modulation in amplitude and polarization angle. The modulation depth of the THz amplitude is up to 69%, and the maximum rotation of the THz polarization angle is 28 degrees, with demonstrated nonvolatile behavior. The study suggests the potential use of this technology in next-generation on-chip THz sources, THz memory devices, and THz ghost imaging applications.
Spintronic terahertz (THz) emitters based on ferromagnetic (FM)-nonmagnetic (NM) heterostructures are the focus of many experimental endeavors for THz sources. However, existing spintronic THz sources control emission by changing the external magnetic field, which is inconvenient for compact integration. Therefore, various modulated mechanisms are in high demand. Here, we present an electric field-controlled spintronic THz emitter based on the ferroelectric (FE)-FM/NM structure that can emit THz radiation with voltage-modulated amplitude and polarization angle. The modulation depth of the THz amplitude is up to 69%, and the maximum rotation of the THz polarization angle is 28 degrees. In addition, after removing the electric field, two different THz-emission states can remain unchanged, demonstrating nonvolatile behavior. Modulation is attributed to magnetoelectric coupling between the FM and FE layers, which modifies magnetization of the FM layer by the electric-field-induced strain in the FE layer, and thus, modulates THz emission. Furthermore, the possibility of a programmable array-type THz source with varied bias voltage is theoretically demonstrated, allowing a spatially modulated THz light to be generated directly without the use of additional spatial light modulators. We believe that this electric-field-controlled THz emitter has the potential to be used in next-generation on-chip THz sources, THz memory devices, and THz ghost imaging.

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