Journal
NANOPHOTONICS
Volume 11, Issue 5, Pages 1041-1049Publisher
WALTER DE GRUYTER GMBH
DOI: 10.1515/nanoph-2021-0738
Keywords
germanium; graphene; photodetector; Schottky junction; split active junction
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Funding
- Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) [2013M3A6B1078873]
- Creative Materials Discovery Program [2017M3D1A1040828]
- FEOL platform development project of the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning (MOSIP), Korea [2020M3F3A2A 02082436]
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The structure of a gate-controlled graphene/germanium hybrid photodetector was optimized by splitting the active region, resulting in significantly improved infrared detection capability.
The structure of a gate-controlled graphene/germanium hybrid photodetector was optimized by splitting the active region to achieve highly sensitive infrared detection capability. The strengthened internal electric field in the split active junctions enabled efficient collection of photocarriers, resulting in a responsivity of 2.02 A W-1 and a specific detectivity of 5.28 x 10(10) Jones with reduced dark current and improved external quantum efficiency; these results are more than doubled compared with the responsivity of 0.85 A W-1 and detectivity of 1.69 x 10(10) Jones for a single active junction device. The responsivity of the optimized structure is 1.7, 2.7, and 39 times higher than that of previously reported graphene/Ge with Al2O3 interfacial layer, gate-controlled graphene/Ge, and simple graphene/Ge heterostructure photodetectors, respectively.
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