Design of an On-Chip Plasmonic Modulator Based on Hybrid Orthogonal Junctions Using Vanadium Dioxide

We present the design of a plasmonic modulator based on hybrid orthogonal silver junctions using vanadium dioxide as the modulating material on a silicon-on-insulator. The modulator has an ultra-compact footprint of 1.8 mu m x 1 mu m with a 100 nm x 100 nm modulating section based on the hybrid orthogonal geometry. The modulator takes advantage of the large change in the refractive index of vanadium dioxide during its phase transition to achieve a high modulation depth of 46.89 dB/mu m. The simulated device has potential applications in the development of next generation high frequency photonic modulators for optical communications which require nanometer scale footprints, large modulation depth and small insertion losses.

Automated summary

The plasmonic modulator designed in this study utilizes hybrid orthogonal silver junctions and vanadium dioxide as the modulating material on a silicon-on-insulator platform. It achieves a high modulation depth of 46.89 dB/mu m with a compact footprint of 1.8 mu m x 1 mu m. The simulated device shows potential for applications in next generation high frequency photonic modulators for optical communications.