Integration Technology for Wafer-Level LiNbO3 Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing

An integration technology for wafer-level LiNbO3 single-crystal thin film on Si has been achieved. The optimized spin-coating speed of PI (polyimide) adhesive is 3500 rad/min. According to Fourier infrared analysis of the chemical state of the film baked under different conditions, a high-quality PI film that can be used for wafer-level bonding is obtained. A high bonding strength of 11.38 MPa is obtained by a tensile machine. The bonding interface is uniform, completed and non-porous. After the PI adhesive bonding process, the LiNbO3 single-crystal was lapped by chemical mechanical polishing. The thickness of the 100 mm diameter LiNbO3 can be decreased from 500 to 10 mu m without generating serious cracks. A defect-free and tight bonding interface was confirmed by scanning electron microscopy. X-ray diffraction results show that the prepared LiNbO3 single-crystal thin film has a highly crystalline quality. Heterogeneous integration of LiNbO3 single-crystal thin film on Si is of great significance to the fabrication of MEMS devices for in-situ measurement of space-sensing signals.

Automated summary

The study successfully achieved the integration technology of wafer-level LiNbO3 single-crystal thin film on Si, optimizing the spin-coating speed and obtaining high-quality adhesive under different baking conditions to achieve high bonding strength. Through further polishing treatment, the thickness of LiNbO3 single crystal was successfully reduced, and a defect-free bonding interface was obtained.