The Key Role of Tin (Sn) in Microstructure and Mechanical Properties of Ti2SnC (M2AX) Thin Nanocrystalline Films and Powdered Polycrystalline Samples

Layered ternary Ti2SnC carbides have attracted significant attention because of their advantage as a M2AX phase to bridge the gap between properties of metals and ceramics. In this study, Ti2SnC materials were synthesized by two different methods-an unconventional low-energy ion facility (LEIF) based on Ar+ ion beam sputtering of the Ti, Sn, and C targets and sintering of a compressed mixture consisting of Ti, Sn, and C elemental powders up to 1250 degrees C. The Ti2SnC nanocrystalline thin films obtained by LEIF were irradiated by Ar+ ions with an energy of 30 keV to the fluence of 1.10(15) cm(-2) in order to examine their irradiation-induced resistivity. Quantitative structural analysis obtained by Cs-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) confirmed transition from ternary Ti2SnC to binary Ti0.98C carbide due to irradiation-induced beta-Sn surface segregation. The nanoindentation of Ti2SnC thin nanocrystalline films and Ti2SnC polycrystalline powders shows that irradiation did not affect significantly their mechanical properties when concerning their hardness (H) and Young's modulus (E). We highlighted the importance of the HAADF-STEM techniques to track atomic pathways clarifying the behavior of Sn atoms at the proximity of irradiation-induced nanoscale defects in Ti2SnC thin films.

Automated summary

Layered ternary Ti2SnC carbides can bridge the gap between metals and ceramics. In this study, Ti2SnC materials were synthesized using two different methods and their irradiation-induced resistivity was examined. Structural analysis showed irradiation-induced beta-Sn surface segregation. Nanoindentation experiments showed that irradiation had minimal effect on the hardness and Young's modulus of Ti2SnC materials.