Journal
NANOMATERIALS
Volume 11, Issue 10, Pages -Publisher
MDPI
DOI: 10.3390/nano11102553
Keywords
monolayer thick GaN; AlN multiple quantum wells; III-nitrides; plasma-assisted beam epitaxy; electron-beam pumped ultraviolet-C emitters
Categories
Funding
- Russian Foundation for Basic Research [19-52-12057]
- Deutsche Forschungsgemeinschaft [409810106, TRR 160]
- RFBR/JSPS joint research project [21-52-50004]
- National Key R&D Program of China [2017YFE0100300]
- RFBR-BRICS [17-52-80089]
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Monolayer-scale GaN/AlN multiple quantum well structures grown on c-sapphire substrates under controllable metal-rich conditions exhibit bright UV emission. The structures have smooth surface topology and absence of stress at certain well thickness, enabling high-power UV emission under specific excitation conditions.
Monolayer (ML)-scale GaN/AlN multiple quantum well (MQW) structures for electron-beam-pumped ultraviolet (UV) emitters are grown on c-sapphire substrates by using plasma-assisted molecular beam epitaxy under controllable metal-rich conditions, which provides the spiral growth of densely packed atomically smooth hillocks without metal droplets. These structures have ML-stepped terrace-like surface topology in the entire QW thickness range from 0.75-7 ML and absence of stress at the well thickness below 2 ML. Satisfactory quantum confinement and mitigating the quantum-confined Stark effect in the stress-free MQW structures enable one to achieve the relatively bright UV cathodoluminescence with a narrow-line (similar to 15 nm) in the sub-250-nm spectral range. The structures with many QWs (up to 400) exhibit the output optical power of similar to 1 W at 240 nm, when pumped by a standard thermionic-cathode (LaB6) electron gun at an electron energy of 20 keV and a current of 65 mA. This power is increased up to 11.8 W at an average excitation energy of 5 mu J per pulse, generated by the electron gun with a ferroelectric plasma cathode at an electron-beam energy of 12.5 keV and a current of 450 mA.
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