Effect of Oxygen Flow Rate on Properties of Aluminum-Doped Indium-Saving Indium Tin Oxide (ITO) Thin Films Sputtered on Preheated Glass Substrates

Amorphous aluminum-doped indium tin oxide (ITO) thin films with a reduced indium oxide content of 50 mass% were manufactured by co-sputtering of ITO and Al2O3 targets in a mixed argon-oxygen atmosphere onto glass substrates preheated at 523 K. The oxygen gas flow rate and heat treatment temperature effects on the electrical, optical and structural properties of the films were studied. Thin films were characterized by means of a four-point probe, ultraviolet-visible-infrared (UV-Vis-IR) spectroscopy and X-ray diffraction. Transmittance of films and crystallization temperature increased as a result of doping of the ITO thin films by aluminum. The increase in oxygen flow rate led to an increase in transmittance and hindering of the crystallization of the aluminum-doped indium saving ITO thin films. It has been found that the film sputtered under optimal conditions showed a volume resistivity of 713 mu omega cm, mobility of 30.8 cm(2)/V center dot s, carrier concentration of 2.9 x 10(20) cm(-3) and transmittance of over 90% in the visible range.

Automated summary

Amorphous aluminum-doped indium tin oxide (ITO) thin films were manufactured by co-sputtering ITO and Al2O3 targets onto glass substrates, with the oxygen flow rate and heat treatment temperature affecting the electrical, optical and structural properties. Optimally sputtered films showed improved conductivity and transmittance while hindering crystallization, with a volume resistivity of 713 mu omega cm, mobility of 30.8 cm(2)/V center dot s, carrier concentration of 2.9 x 10(20) cm(-3) and over 90% transmittance in the visible range.