Related references
Note: Only part of the references are listed.Gradually Tunable Conductance in TiO2/Al2O3 Bilayer Resistors for Synaptic Device
Hojeong Ryu et al.
METALS (2021)
Noise-assisted persistence and recovery of memory state in a memristive spiking neuromorphic network
I. A. Surazhevsky et al.
CHAOS SOLITONS & FRACTALS (2021)
Resistive and synaptic properties modulation by electroforming polarity in CMOS-compatible Cu/HfO2/Si device
Jinwoong Yang et al.
CHAOS SOLITONS & FRACTALS (2021)
Artificial Neurons Based on Ag/V2C/W Threshold Switching Memristors
Yu Wang et al.
NANOMATERIALS (2021)
Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode
Hojeong Ryu et al.
METALS (2021)
Optimization of Multi-Level Operation in RRAM Arrays for In-Memory Computing
Eduardo Perez et al.
ELECTRONICS (2021)
In-Memory Computing with Resistive Memory Circuits: Status and Outlook
Giacomo Pedretti et al.
ELECTRONICS (2021)
Implementation of a reservoir computing system using the short-term effects of Pt/HfO2/TaOx/TiN memristors with self-rectification
Hojeong Ryu et al.
CHAOS SOLITONS & FRACTALS (2021)
Stochastic Memristive Interface for Neural Signal Processing
Svetlana A. Gerasimova et al.
SENSORS (2021)
In-Memory-Computing Realization with a Photodiode/Memristor Based Vision Sensor
Nikolaos Vasileiadis et al.
MATERIALS (2021)
Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM
Zhenzhong Zhang et al.
MATERIALS (2021)
Volatile Resistive Switching Characteristics of Pt/HfO2/TaOx/TiN Short-Term Memory Device
Hojeong Ryu et al.
METALS (2021)
Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device
Hojeong Ryu et al.
METALS (2021)
Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation
Te-Jui Yen et al.
NANOMATERIALS (2021)
Architecture and Process Integration Overview of 3D NAND Flash Technologies
Geun Ho Lee et al.
APPLIED SCIENCES-BASEL (2021)
Self-adaptive STDP-based learning of a spiking neuron with nanocomposite memristive weights
A. Emelyanov et al.
NANOTECHNOLOGY (2020)
Multilayer Metal-Oxide Memristive Device with Stabilized Resistive Switching
Alexey Mikhaylov et al.
ADVANCED MATERIALS TECHNOLOGIES (2020)
Neurohybrid Memristive CMOS-Integrated Systems for Biosensors and Neuroprosthetics
Alexey Mikhaylov et al.
FRONTIERS IN NEUROSCIENCE (2020)
In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random-Access-Memory Devices
Siddheswar Maikap et al.
ADVANCED ELECTRONIC MATERIALS (2020)
Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications
Firman Mangasa Simanjuntak et al.
NANOTECHNOLOGY (2020)
Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays
Eduardo Perez et al.
ELECTRONICS (2020)
Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application
Zongjie Shen et al.
NANOMATERIALS (2020)
Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure
Junhyeok Choi et al.
COATINGS (2020)
Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods
Tzu-Han Su et al.
MATERIALS (2020)
Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer
Junhyeok Choi et al.
MICROMACHINES (2020)
Voltage Amplitude-Controlled Synaptic Plasticity from Complementary Resistive Switching in Alloying HfOx with AlOx-Based RRAM
Hojeong Ryu et al.
METALS (2020)
Short-Term Memory Dynamics of TiN/Ti/TiO2/SiOx/Si Resistive Random Access Memory
Hyojong Cho et al.
NANOMATERIALS (2020)
Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot
Hojeong Ryu et al.
NANOMATERIALS (2020)
Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO2/Pt RRAM Devices
Xiaojuan Lian et al.
ELECTRONICS (2020)
Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device
Hojeong Ryu et al.
NANOMATERIALS (2020)
Negative differential resistance effect and dual bipolar resistive switching properties in a transparent Ce-based devices with opposite forming polarity
Muhammad Ismail et al.
APPLIED SURFACE SCIENCE (2020)
Improving linearity by introducing Al in HfO2 as a memristor synapse device
Sridhar Chandrasekaran et al.
NANOTECHNOLOGY (2019)
Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process
Chao-Feng Liu et al.
NANOMATERIALS (2019)
Recommended Methods to Study Resistive Switching Devices
Mario Lanza et al.
ADVANCED ELECTRONIC MATERIALS (2019)
Film-Nanostructure-Controlled Inerasable-to-Erasable Switching Transition in ZnO-Based Transparent Memristor Devices: Sputtering-Pressure Dependency
Firman Mangasa Simanjuntak et al.
ACS APPLIED ELECTRONIC MATERIALS (2019)
Comparative study of the growth characteristics and electrical properties of atomic-layer-deposited HfO2 films obtained from metal halide and amide precursors
Il-Kwon Oh et al.
JOURNAL OF MATERIALS CHEMISTRY C (2018)
CMOS Compatible Bio-Realistic Implementation with Ag/HfO2-Based Synaptic Nanoelectronics for Artificial Neuromorphic System
Lin Chen et al.
ELECTRONICS (2018)
In-memory computing with resistive switching devices
Daniele Ielmini et al.
NATURE ELECTRONICS (2018)
The era of hyper-scaling in electronics
Sayeef Salahuddin et al.
NATURE ELECTRONICS (2018)
Phase-Change Memory-Towards a Storage-Class Memory
Scott W. Fong et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
1T1R Nonvolatile Memory with Al/TiO2/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor
Ke-Jing Lee et al.
MATERIALS (2017)
Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method
Kai-Huang Chen et al.
MATERIALS (2017)
Asymmetric Current Behavior on Unipolar Resistive Switching in Pt/HfO2/Pt Resistor With Symmetric Electrodes
Jiehun Kang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
3D Ta/TaOx/TiO2/Ti synaptic array and linearity tuning of weight update for hardware neural network applications
I-Ting Wang et al.
NANOTECHNOLOGY (2016)
Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
Ee Wah Lim et al.
ELECTRONICS (2015)
Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing
Yao-Feng Chang et al.
JOURNAL OF APPLIED PHYSICS (2014)
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
F. Pan et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2014)
Stabilized resistive switching behaviors of a Pt/TaOx/TiN RRAM under different oxygen contents
Heeyoung Jeon et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2014)
Memristive devices for computing
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2013)
Long-Endurance Nanocrystal TiO2 Resistive Memory Using a TaON Buffer Layer
C. H. Cheng et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories
D. Ielmini et al.
NANOTECHNOLOGY (2011)
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures
Myoung-Jae Lee et al.
NATURE MATERIALS (2011)
Fully room-temperature-fabricated TiN/TaOx/Pt nonvolatile memory devices
Sun Young Choi et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2010)
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
Coexistence of bipolar and unipolar resistive switching behaviors in a Pt/TiO2/Pt stack
Doo Seok Jeong et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2007)