Multi-Level Resistive Switching of Pt/HfO2/TaN Memory Device

This work characterizes resistive switching and neuromorphic simulation of Pt/HfO2/TaN stack as an artificial synaptic device. A stable bipolar resistive switching operation is performed by repetitive DC sweep cycles. Furthermore, endurance (DC 100 cycles) and retention (5000 s) are demonstrated for reliable resistive operation. Low-resistance and high-resistance states follow the Ohmic conduction and Poole-Frenkel emission, respectively, which is verified through the fitting process. For practical operation, the set and reset processes are performed through pulses. Further, potentiation and depression are demonstrated for neuromorphic application. Finally, neuromorphic system simulation is performed through a neural network for pattern recognition accuracy of the Fashion Modified National Institute of Standards and Technology dataset.

Automated summary

This study characterizes the resistive switching and neuromorphic simulation of a Pt/HfO2/TaN stack as an artificial synaptic device, demonstrating stable bipolar resistive switching operation and reliability through endurance and retention tests. The conduction mechanisms of low-resistance and high-resistance states were verified, and practical set and reset processes were performed using pulses. Neuromorphic applications such as potentiation and depression were also demonstrated, along with a neural network simulation for pattern recognition accuracy on the Fashion Modified National Institute of Standards and Technology dataset.