Journal
CATALYSTS
Volume 11, Issue 10, Pages -Publisher
MDPI
DOI: 10.3390/catal11101221
Keywords
reforming of methane; carbon dioxide; nickel; glycine; SiO2
Categories
Funding
- National Natural Science Foundation of China [21908182, 21901214]
- Natural Science Foundation of Shaanxi Science and Technology Department [2020JM-643, 2020JQ-918]
- Scientific Research Foundation for Youth Innovation Team of Education Department of Shaanxi Provincial Government [21JP139, 21JP136]
- Youth Innovation Team of Shaanxi Universities
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Ni-G/SiO2-P catalyst prepared by adding glycine showed better performance and increased stability in carbon-dioxide reforming of methane (CDR) due to its smaller particle size and narrower distribution.
Reforming methane to produce syngas is a subject that generates considerable interest. The process requires catalysts that possess high-performance active sites to activate stable C-H bonds. Herein, we report a facile synthetic strategy to prepare Ni-based catalysts by complexation-impregnation (Ni-G/SiO2-C) and precipitation-impregnation (Ni-G/SiO2-P) methods using glycine as a complexing agent. The particle size of Ni in both types of catalysts is decreased by adding glycine in the preparation process. Nevertheless, the preparation methods and amount of glycine play a significant role in the particle size and distribution of Ni over the Ni-based catalysts. The smaller particle size and narrower distribution of Ni were obtained in the Ni-G/SiO2-P catalyst. The catalysts were comparatively tested for carbon-dioxide reforming of methane (CDR). Ni-G/SiO2-P showed better CDR performance than Ni-G/SiO2-C and Ni/SiO2 and increased stability because of the smaller particle size and narrower distribution of Ni. Moreover, a high-performance Ni-based catalyst was prepared by optimizing the amount of glycine added. An unobservable deactivation was obtained over Ni-G-2/SiO2-P and Ni-G-3/SiO2-P for CDR during TOS = 20 h. Thus, a new promising method is described for the preparation of Ni-based catalysts for CDR.
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