Journal
ADVANCED MATERIALS INTERFACES
Volume 9, Issue 1, Pages -Publisher
WILEY
DOI: 10.1002/admi.202100977
Keywords
CVD-graphene; textured-Si; detectors; energy generation; energy storage; solar cells
Funding
- National Natural Science Foundation of China [62025403, 61974129, 61721005]
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The integration of CVD graphene with textured-Si substrates offers solutions to the poor light absorption capability and high reflectance of planar-Si substrate. This combination has been successfully demonstrated in high-performance solar cells and PDs, showing enhanced light harvesting and charge separation/transport efficiency.
Integration of chemical vapor deposited (CVD) graphene with textured-Si substrates is an emerging research area wide open. Graphene can serve as both a transparent top electrode and a charge-separating/transport-active layer. However, its low light absorption capability, and high reflectance of planar-Si substrate are major concerns for light harvesting required for photovoltaic devices especially solar cells and photodetectors (PDs). Therefore, CVD-graphene/textured-Si heterostructure effectively addresses this problem as the textured-Si provides more surface area for light harvesting by suppressing light reflection and enables the efficient charge separation/transport as well. Recently, CVD-graphene/textured-Si Schottky junction based high performance solar cells and PDs have successfully been demonstrated. Moreover, the graphene coating on textured-Si enhances the conductivity of Si anodes and provides structural stability for lithium-ion batteries (LIBs). Furthermore, the optoelectronic coupled interfacial properties in such heterostructures suitably construct the platforms for surface enhanced Raman scattering (SERS) based detection and photocathodes for H-2-production, respectively. Hence, in this review, the fabrication of various CVD-graphene/textured-Si heterostructures and their applications in solar cells, PDs, SERS, LIBs, and H-2-production are critically analyzed with respect to the synergistic effect of Si-texturing, electronic/optoelectronic properties of CVD-graphene, etc. Finally, conclusions and outlook of this rapidly emerging and technologically broad research area are presented.
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