High current output direct-current triboelectric nanogenerator based on organic semiconductor heterojunction

The high demand on direct current (DC) power source generated through triboelectric effect drives the research on semiconductor-based triboelectric nanogenerators (TENGs), which have lower internal resistance. With high flexibility, organic semiconductor-based DC TENGs are more intriguing. In this work, we use organic semiconductor Poly (3,4-ethylene dioxythiophene): poly(styrene sulfonate) (PEDOT: PSS) as a friction layer to make organic semiconductor-based TENGs. By experimentally analyzing the work functions of PEDOT: PSS, Al alloy, Si, ITO, Cu, and graphene, the DC devices with PEDOT: PSS/Al alloy triboelectric layers exhibit impressive performance. Our PEDOT: PSS/Al alloy DC TENGs achieves open-circuit voltage about 1 V, and short-circuit current up to 309 mu A. The internal resistance of the DC TENG is tested to be about 2x10(4) Omega, and the power density reaches 11.67 mW/m(2). Effects of the load pressure, sliding speed, and size of the devices are systematically studied in this work. The charging probability of our DC TENGs as power sources and human body motion detecting capability as force sensors are all experimentally tested, indicating further potential applications of our PEDOT: PSS/Al alloy DC TENGs as flexible energy sources and motion detector.

Automated summary

The research focuses on semiconductor-based triboelectric nanogenerators (TENGs) due to the high demand for direct current (DC) power sources generated through the triboelectric effect. By using organic semiconductor Poly (3,4-ethylene dioxythiophene): poly(styrene sulfonate) (PEDOT: PSS) as a friction layer, the organic semiconductor-based DC TENGs achieved impressive performance with an open-circuit voltage of about 1 V, short-circuit current up to 309 mu A, internal resistance of approximately 2x10(4) Omega, and power density reaching 11.67 mW/m(2).