Journal
MICROMACHINES
Volume 12, Issue 12, Pages -Publisher
MDPI
DOI: 10.3390/mi12121481
Keywords
3D MEMS; wafer bonding; CMOS-MEMS compatibility; multiple wafer stacking; alignment error corrections
Categories
Funding
- Defense Advanced Research Projects Agency (DARPA) [HR0011-09-2-0004]
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This study demonstrates a high-aspect-ratio three-dimensionally stacked comb structure for micromirror application using wafer bonding technology. The mechanical structure is realized through deep reactive ion etching of silicon and low-temperature fusion bonding of patterned wafers. The dependency of resonant frequency on device dimensions is systematically studied to provide useful guidelines for future design and application.
A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is demonstrated by wafer bonding technology in CMOS-compatible processes in this work. A vertically stacked comb structure is designed to circumvent any misalignment issues that could arise from multiple wafer bonding. These out-of-plane comb drives are used for the bias actuation to achieve a larger tilt angle for micromirrors. The high-aspect-ratio mechanical structure is realized by the deep reactive ion etching of silicon, and the notching effect in silicon-on-insulator (SOI) wafers is minimized. The low-temperature bonding of two patterned wafers is achieved with fusion bonding, and a high bond strength up to 2.5 J/m(2) is obtained, which sustains subsequent processing steps. Furthermore, the dependency of resonant frequency on device dimensions is studied systematically, which provides useful guidelines for future design and application. A finalized device fabricated here was also tested to have a resonant frequency of 17.57 kHz and a tilt angle of 70 degrees under an AC bias voltage of 2 V.
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