Magnetoresistance of high mobility HgTe quantum dot films with controlled charging

The magnetoresistance of HgTe quantum dot films, exhibiting a well-defined 1S(e) state charging and a relatively high mobility (1-10 cm(2) V-1 s(-1)), is measured as a function of temperature down to 10 K and controlled occupation of the first electronic state. There is a positive-quadratic magnetoresistance which can be several 100% at low temperature and scales like x(1 - x) where x is the filling fraction of the lowest quantum dot state in the conduction band, 1S(e). This positive magnetoresistance is orders of magnitude larger than the effect estimated from mobile carriers and it is attributed to the increased confinement induced by the magnetic field. There is also a negative magnetoresistance of 1-20% from 300 K to 10 K which is rather independent of the fractional occupation, and which follows a negative exponential dependence with the magnetic field. It can be empirically fit with an effective g-factor of similar to 55 and it is tentatively attributed to the reduction of barrier heights by the Zeeman splitting of the 1S(e) state.

Automated summary

The magnetoresistance of HgTe quantum dot films shows a positive-quadratic effect correlated with the filling fraction and a negative exponential effect independent of the fractional occupation.