4.6 Article

Electrochemical surface reconstructed Ptx(x=2,3)Si/PtSi/p-Si photocathodes for achieving high efficiency in photoelectrochemical H2 generation

Journal

JOURNAL OF MATERIALS CHEMISTRY A
Volume 10, Issue 9, Pages 4952-4959

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d1ta09346k

Keywords

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Funding

  1. National Key R&D Program of China [2017YFE0196400]
  2. Chinese Academy of Sciences [GJHZ201938, QYZDJ-SSW-JSC032, ZDRW-CN-2021-3-3]
  3. NSFC [21975269, 52172107]
  4. Beijing Natural Science Foundation [2181002]
  5. Youth Innovation Promotion Association of CAS [Y201926]
  6. Australian Research Council [DP200100159]
  7. Australian Research Council [DP200100159] Funding Source: Australian Research Council

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In this study, a Ptx(x=2,3)Si/PtSi/p-Si photocathode was designed and fabricated to improve the photovoltage and enhance the hydrogen evolution reaction kinetics for efficient H-2 generation via PEC. The use of dopant segregation elevated the Schottky barrier height, leading to a high photovoltage, while in situ formation of a high catalytic activity Ptx(x=2,3)Si layer on the photocathode significantly enhanced the HER kinetics. The photocathode achieved a favorable onset potential for HER and a high saturated photocurrent density, with a maximum ABPE of 5.8% and excellent stability in long-term PEC H-2 generation testing.
Using Si-based photoelectrodes to generate H-2 through photoelectrochemical (PEC) water splitting has attracted extensive attention in recent years. To produce H-2 with a high efficiency, the key issues that need to be solved are the relatively low photovoltage of the Si-based photoelectrode and the sluggish kinetics of the H-2 generation reaction occurring on the surface of Si. In this study, we designed and fabricated the Ptx(x=2,3)Si/PtSi/p-Si photocathode for high-efficiency H-2 generation via PEC. The theoretically lower PtSi/p-Si junction Schottky barrier height was elevated to a high value of 0.9 eV by dopant segregation, thereby obtaining a high photovoltage. Upon the electrochemical surface reconstruction of PtSi, a thin layer of Ptx(x=2,3)Si with a high catalytic activity is in situ formed on the photocathode which significantly enhances the hydrogen evolution reaction (HER) kinetics. Accordingly, a favorable onset potential for HER of 0.54 V vs. RHE and a high saturated photocurrent density of 30 mA cm(-2) at 0 V vs. RHE are achieved from the Ptx(x=2,3)Si/PtSi/p-Si photocathode. The applied-bias photo-to-current efficiency (ABPE) of the Ptx(x=2,3)Si/PtSi/p-Si photocathode reaches a maximum at 5.8%, which is record-high for the Si-based single junction photocathodes without a buried p-n junction. Moreover, the Ptx(x=2,3)Si/PtSi/p-Si photocathode exhibits an excellent stability in the long-term PEC H-2 generation test. This work provides a new perception onto the design and construction of Si-based photocathodes with improved catalytic activity, as well as the possibility of efficient and stable PEC H-2 generation.

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