Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 12, Issue 3, Pages 662-668Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2021.3113861
Keywords
Annealing; Lamination; Silicon; Heterojunctions; Temperature measurement; Degradation; Photovoltaic cells; Light soaking (LS); reliability; silicon hetero-junction (SHJ)
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The effect of light soaking and forward electric bias treatment on silicon heterojunction solar cells and modules, along with the influence of thermal treatment during lamination, is investigated. It is found that the lamination process can partially reset the improved performance after electric bias or light soaking. However, a second treatment after lamination can improve performance again, leading to similar final performance regardless of the prelamination treatment.
We investigate the effect of light soaking and forward electric bias treatment on silicon heterojunction solar cells and modules and, in particular, the influence of the thermal treatment occurring during lamination. A substantial performance increase is observed after electric bias or light soaking, which is shown to be potentially partly reset by the lamination process. This reset is reproduced by annealing the cells with the same thermal budget. A second treatment after lamination again improves performances, and a similar final performance is reached independently of the prelamination treatment. Therefore, a single treatment after lamination enables maximal module output with no benefit from a cell pretreatment. Whereas the cells react overall better to forward bias, the modules show a slightly better response to light soaking.
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