Simulated Study and Surface Passivation of Lithium Fluoride-Based Electron Contact for High-Efficiency Silicon Heterojunction Solar Cells

Numerical simulation and experimental techniques were used to investigate lithium fluoride (LiFx) films as an electron extraction layer for the application of silicon heterojunction (SHJ) solar cells, with a focus on the paths toward excellent surface passivation and superior efficiency. The presence of a 7 nm thick hydrogenated intrinsic amorphous silicon (a-Si:H(i)) passivation layer along with thermally evaporated 4 nm thick LiFx resulted in outstanding passivation properties and suppresses the recombination of carriers. As a result, minority carrier lifetime (tau (eff)) as well as implied open-circuit voltage (iV(oc)) reached up 933 mu s and iV(oc) of 734 mV, accordingly at 120 degrees C annealing temperature. A detailed simulated study was performed for the complete LiFx based SHJ solar cells to achieve superior efficiency. Optimized performance of SHJ solar cells using a LiFx layer thickness of 4 nm with energy bandgap (E-g) of 10.9 eV and the work function of 3.9 eV was shown as: V-oc = 745.7 mV, J(sc) = 38.21 mA cm(-2), FF = 82.17%, and eta = 23.41%. Generally, our work offers an improved understanding of the passivation layer, electron extraction layer, and their combined effects on SHJ solar cells via simulation.

Automated summary

Numerical simulation and experimental techniques were used to investigate the application of LiFx films as electron extraction layer for SHJ solar cells. The combination of a hydrogenated intrinsic amorphous silicon passivation layer and thermally evaporated LiFx showed outstanding passivation properties and suppressed carrier recombination. Through simulation, an optimized LiFx layer thickness of 4 nm with an energy bandgap of 10.9 eV and work function of 3.9 eV achieved excellent performance for SHJ solar cells.