How to Obtain Anti-Thermal-Quenching Inorganic Luminescent Materials for Light-Emitting Diode Applications

Phosphor-converted light-emitting diode (pc-LED) has drawn much interest due to the efficient light in solid-state lighting, backlight display, security, and electronic devices. Thermal quenching (TQ) induced by nonradiative relaxation is one of the vital challenges that limits the widespread use of phosphors. Much efforts are devoted to designing different approaches to solve the emission loss at increasing temperature. Here, the mechanism of TQ and recent advances of anti-TQ-phosphor-involved 5d-4f, 4f-4f, 6p-6s, 3d-3d transitions are discussed. Several important design strategies for anti-TQ phosphors are summarized as follows: 1) defect engineering; 2) energy transfer; 3) structural modulation; 4) enhancing crystallinity; 5) layer structural design; 6) negative/zero thermal expansion; 7) surface coating and glass technology. Additionally, some future challenges and opportunities in this field are proposed. This review promotes the discovery of novel anti-TQ phosphor materials for LED applications.

Automated summary

Phosphor-converted light-emitting diodes (pc-LEDs) are widely researched due to their efficient light emission in solid-state lighting, backlight displays, security, and electronic devices. However, thermal quenching, which leads to emission loss at high temperatures, hinders the widespread use of phosphors. This review discusses the mechanism of thermal quenching and recent advances in designing anti-thermal-quenching phosphors involving different transitions. Various design strategies for anti-thermal-quenching phosphors are summarized, along with future challenges and opportunities in this field.