4.6 Article

Laser-Assisted Synthesis of Ag2S-Quantum-Dot-in-Perovskite Matrix and Its Application in Broadband Photodetectors

Journal

ADVANCED OPTICAL MATERIALS
Volume 10, Issue 1, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.202101535

Keywords

Ag; S-2 quantum dots; doping strategy; perovskites; vis-NIR photodetectors

Funding

  1. National Key Research and Development Program of China [2018YFB1107202]
  2. National Natural Science Foundation of China
  3. NSFC [61774155, 91750205, 61705227]
  4. K. C. Wong Education Foundation [GJTD-2018-08]

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A novel approach was developed to introduce silver sulfide quantum dots into a MAPbBr(3) single crystal, resulting in high-quality Ag2S-quantum-dot-in-perovskite matrixes with broadband light sensitivity and balanced carrier mobility. The synthesized Ag2S-QDiP-enabled photodetector showed significantly enhanced responsivity and detectivity in the near-infrared region. This study highlights the potential of introducing quantum dots into perovskite single crystal as an efficient strategy for tuning fundamental properties and developing high-efficiency electronic and optoelectronic devices.
Halide perovskites are widely explored as efficient photoresponsive materials for optoelectronic devices. However, understanding and controlling their underlying optical and electrical properties remains limited. Here, a novel approach is developed by introducing silver sulfide (Ag2S) quantum dots (QDs) into an MAPbBr(3) single crystal. The high-quality Ag2S-quantum-dot-in-perovskite (Ag2S-QDiP) matrixes synthesized through a laser-assisted inverse temperature crystallization (LA-ITC) strategy show broadband light-sensitive wavelength from 550 to over 1000 nm, and a balanced carriers mobility facilitates their transmission and collection. A Ag2S-QDiP-enabled photodetector is demonstrated, which exhibits considerably enhanced responsivity and detectivity of 1.17 A W-1 and 6.24 x 10(14) Jones at 532 nm, and 57.69 mA W-1 and 1.03 x 10(11) Jones at 1064 nm, respectively. The enhanced performance in the near-infrared (NIR) region can be attributed to the discrete heterojunction formed between MAPbBr(3) and Ag2S QDs, which enhances the light absorption in the NIR range and facilitates photogenerated excitons' separation at the interface. The facile synthesis process, the more balanced transport behavior, and the ensuing improved device performance highlight introducing QDs into perovskite single crystal as an efficient strategy for tuning fundamental properties of perovskite and for developing high-efficiency broadband electronic and optoelectronic devices.

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