Effect of Raised Buried Oxide on Characteristics of Tunnel Field Effect Transistor

The aggressive scaling of metal-oxide-semiconductor (MOS) devices has transcended the micrometer scale into nanometer scale. However, scaling in the nanoscale regime faces numerous issues like threshold voltage roll-off, and short channel effects (SCEs). This paper presents a numerically simulated Ge-source based Tunnel Field Effect Transistor with (TFETs) SiO2 segregation between the channel and drain. The developed device has been compared with conventional TFET and without isolated heterojunction TFET. The use of oxide segregation between channel and drain enhances the performance of the device in terms of ON-state current as well as subthreshold swing (SS). The electrical characteristics such as surface potential, electric field, transfer characteristics, output characteristics of the proposed device have been studied. The temperature variation of the proposed device has also been studied. The proposed device offers high ON current of 3 x 10(-4)A, I-ON/I-OFF ratio of -1011-and enhanced SS of 30 mV/dec. The validity of the proposed device has been done by Silvaco Atlas TCAD.

Automated summary

This paper presents a numerically simulated Ge-source based TFET with SiO2 segregation, which shows improved performance compared to conventional TFET. The device exhibits superior ON-state current and subthreshold swing, and has been studied in various aspects such as electrical characteristics and temperature variation. The proposed device offers high ON current, I-ON/I-OFF ratio, and enhanced SS, which have been validated through Silvaco Atlas TCAD.