Journal
SCIENTIFIC REPORTS
Volume 12, Issue 1, Pages -Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41598-022-05253-4
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Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2019R1I1A1A01061983]
- GIST Research Institute (GRI) - GIST
- National Research Foundation of Korea [2019R1I1A1A01061983] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this study, we propose two graphene-based optical free-space type modulators that achieve high modulation depth and low insertion loss. These modulators demonstrate outstanding performance at the optical communication wavelength.
Graphene-based optical modulators have been widely investigated due to the high mobility and tunable permittivity of graphene. However, achieving a high modulation depth with a low insertion loss is challenging owing to low graphene-light interaction. To date, only waveguide-type modulators have been extensively studied to improve light-graphene interaction, and few free-space type modulators have been demonstrated in the optical communication wavelength range. In this study, we propose two graphene-based optical free-space type modulators in a simple silicon photonic crystal structure that supports bound states in the continuum. The designed modulator with an ultra-high quality factor from the bound states in the continuum achieves a high modulation depth (MD = 0.9972) and low insertion loss (IL = 0.0034) with a small Fermi level change at the optical communication wavelength. In addition, the proposed modulators support outstanding modulation performance in the normal chemical vapor deposition (CVD) graphene (mobility = 0.5 m(2)/Vs). We believe the scheme may pave the way for graphene-based optical active devices.
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