On the mechanism of carrier recombination in downsized blue micro-LEDs

The mechanism of carrier recombination in downsized mu-LED chips from 100 x 100 to 10 x 10 mu m(2) on emission performance was systemically investigated. All photolithography processes for defining the mu-LED pattern were achieved by using a laser direct writing technique. This maskless technology achieved the glass-mask-free process, which not only can improve the exposure accuracy but also save the development time. The multi-functional SiO2 film as a passivation layer successfully reduced the leakage current density of mu-LED chips compared with the mu-LED chips without passivation layer. As decreasing the chip size to 10 x 10 mu m(2), the smallest chip size exhibited the highest ideality factor, which indicated the main carrier recombination at the high-defect-density zone in mu-LED chip leading to the decreased emission performance. The blue-shift phenomenon in the electroluminescence spectrum with decreasing the mu-LED chip size was due to the carrier screening effect and the band filling effect. The 10 x 10 mu m(2) mu-LED chip exhibited high EQE values in the high current density region with a less efficiency droop, and the max-EQE value was 18.8%. The luminance of 96 x 48 mu-LED array with the chip size of 20 x 20 mu m(2) exhibited a high value of 516 nits at the voltage of 3 V.

Automated summary

The mechanism of carrier recombination in downsized mu-LED chips was investigated, showing that the smallest chip size exhibited the highest ideality factor due to carrier recombination in high-defect-density zones. The use of a passivation layer and a maskless technology improved the performance and efficiency of the mu-LED chips. The blue-shift phenomenon in the electroluminescence spectrum was attributed to carrier screening and band filling effects, with high EQE values observed in the high current density region for the 10 x 10 μm(2) mu-LED chip.