Aligned CuO nanowire array for a high performance visible light photodetector

Recently, copper oxide (CuO) has drawn much attention as a promising material in visible light photodetection with its advantages in ease of nanofabrication. CuO allows a variety of nanostructures to be explored to enhance the optoelectrical performance such as photogenerated carriers scattering and bandgap engineering. However, previous researches neglect in-depth analysis of CuO's light interaction effects, restrictively using random orientation such as randomly arranged nanowires, single nanowires, and dispersed nanoparticles. Here, we demonstrate an ultra-high performance CuO visible light photodetector utilizing perfectly-aligned nanowire array structures. CuO nanowires with 300 nm-width critical dimension suppressed carrier transport in the dark state and enhanced the conversion of photons to carriers; additionally, the aligned arrangement of the nanowires with designed geometry improved the light absorption by means of the constructive interference effect. The proposed nanostructures provide advantages in terms of dark current, photocurrent, and response time, showing unprecedentedly high (state-of-the-art) optoelectronic performance, including high values of sensitivity (S = 172.21%), photo-responsivity (R = 16.03 A/W, lambda = 535 nm), photo-detectivity (D* = 7.78 x 10(11) Jones), rise/decay time (tau(r)/tau(d) = 0.31 s/1.21 s).

Automated summary

CuO nanowire array structures exhibit ultra-high performance in visible light photodetection. By aligning and optimizing the dimensions of the nanowires, the optoelectrical performance of CuO can be significantly enhanced, including light absorption and carrier conversion.