4.6 Article

Electroplating Deposition of Bismuth Absorbers for X-ray Superconducting Transition Edge Sensors

Journal

MATERIALS
Volume 14, Issue 23, Pages -

Publisher

MDPI
DOI: 10.3390/ma14237169

Keywords

transition edge sensors; bismuth; absorbers; electroplating deposition

Funding

  1. Fundamental Research Projects in Basic Scientific Research at NIM [AKYZZ2125, AKYZD1903]
  2. Science and technology project of State Administration for Market Regulation, China [2020MK153, 2019MK112]

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Bismuth (Bi) films have been found to be a superior absorber for X-ray transition edge sensors (TESs) compared to gold (Au), with a higher absorption rate and unique crystal structure.
An absorber with a high absorbing efficiency is crucial for X-ray transition edge sensors (TESs) to realize high quantum efficiency and the best energy resolution. Semimetal Bismuth (Bi) has shown greater superiority than gold (Au) as the absorber due to the low specific heat capacity, which is two orders of magnitude smaller. The electroplating process of Bi films is investigated. The Bi grains show a polycrystalline rhombohedral structure, and the X-ray diffraction (XRD) patterns show a typical crystal orientation of (012). The average grain size becomes larger as the electroplating current density and the thickness increase, and the orientation of Bi grains changes as the temperature increases. The residual resistance ratio (RRR) (R-300 K/R-4.2 K) is 1.37 for the Bi film (862 nm) deposited with 9 mA/cm(2) at 40 degrees C for 2 min. The absorptivity of the 5 mu m thick Bi films is 40.3% and 30.7% for 10 keV and 15.6 keV X-ray radiation respectively, which shows that Bi films are a good candidate as the absorber of X-ray TESs.

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