4.6 Article

Towards Interband Cascade lasers on InP Substrate

Journal

MATERIALS
Volume 15, Issue 1, Pages -

Publisher

MDPI
DOI: 10.3390/ma15010060

Keywords

interband cascade laser; type II quantum well; indium phosphide; mid infrared; optical gain

Funding

  1. Polish National Agency for Academic Exchange [PPI/APM/2018/1/00031/U/001]

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In this study, designs of an interband cascade laser (ICL) active region capable of emitting in the mid infrared (MIR) range and grown on an InP substrate are proposed. By theoretically investigating different types of quantum wells made of InGaAs/InAs/GaAsSb with various barriers, the study shows the potential for achieving emission wavelengths from below 3 to at least 4.6 μm, while maintaining high gain compared to state-of-the-art ICLs.
In this study, we propose designs of an interband cascade laser (ICL) active region able to emit in the application-relevant mid infrared (MIR) spectral range and to be grown on an InP substrate. This is a long-sought solution as it promises a combination of ICL advantages with mature and cost-effective epitaxial technology of fabricating materials and devices with high structural and optical quality, when compared to standard approaches of growing ICLs on GaSb or InAs substrates. Therefore, we theoretically investigate a family of type II, W-shaped quantum wells made of InGaAs/InAs/GaAsSb with different barriers, for a range of compositions assuring the strain levels acceptable from the growth point of view. The calculated band structure within the 8-band k center dot p approximation showed that the inclusion of a thin InAs layer into such a type II system brings a useful additional tuning knob to tailor the electronic confined states, optical transitions' energy and their intensity. Eventually, it allows achieving the emission wavelengths from below 3 to at least 4.6 mu m, while still keeping reasonably high gain when compared to the state-of-the-art ICLs. We demonstrate a good tunability of both the emission wavelength and the optical transitions' oscillator strength, which are competitive with other approaches in the MIR. This is an original solution which has not been demonstrated so far experimentally. Such InP-based interband cascade lasers are of crucial application importance, particularly for the optical gas sensing.

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