4.6 Article

Phase Analysis and Thermoelectric Properties of Cu-Rich Tetrahedrite Prepared by Solvothermal Synthesis

Journal

MATERIALS
Volume 15, Issue 3, Pages -

Publisher

MDPI
DOI: 10.3390/ma15030849

Keywords

Cu-rich tetrahedrites; solvothermal synthesis; crystal structure; electronic structure; thermoelectric properties; liquid-like materials

Funding

  1. Foundation for Polish Science [TEAM-TECH/2016-2/14]
  2. European Union under the European Regional Development Fund

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Tetrahedrites are considered promising thermoelectric materials due to their large Seebeck coefficient and low thermal conductivity. DFT calculations show that introducing additional copper atoms in Cu-rich Cu14Sb4S13 tetrahedrite can effectively achieve high thermoelectric performance. A novel method using solvothermal and piperazine as solvent and reagent is employed to prepare Cu-rich tetrahedrite. The prepared Cu14Sb4S13 tetrahedrites exhibit high Seebeck coefficient and low thermal conductivity, resulting in excellent thermoelectric figure of merit.
Because of the large Seebeck coefficient, low thermal conductivity, and earth-abundant nature of components, tetrahedrites are promising thermoelectric materials. DFT calculations reveal that the additional copper atoms in Cu-rich Cu14Sb4S13 tetrahedrite can effectively engineer the chemical potential towards high thermoelectric performance. Here, the Cu-rich tetrahedrite phase was prepared using a novel approach, which is based on the solvothermal method and piperazine serving both as solvent and reagent. As only pure elements were used for the synthesis, the offered method allows us to avoid the typically observed inorganic salt contaminations in products. Prepared in such a way, Cu14Sb4S13 tetrahedrite materials possess a very high Seebeck coefficient (above 400 mu VK-1) and low thermal conductivity (below 0.3 Wm(-1)K(-1)), yielding to an excellent dimensionless thermoelectric figure of merit ZT approximate to 0.65 at 723 K. The further enhancement of the thermoelectric performance is expected after attuning the carrier concentration to the optimal value for achieving the highest possible power factor in this system.

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