Journal
MATERIALS
Volume 15, Issue 3, Pages -Publisher
MDPI
DOI: 10.3390/ma15030740
Keywords
quantum dot; light-emitting diode; dual-facets emission
Categories
Funding
- National Key Research and Development Program of China [2018YFE0125500]
- Program 111_2.0 in China [BP0719013]
- National Natural Science Foundation Project of China [12005038, 61775034, 51879042, 61674029, 12174049, 51972058, 62175028]
- Research Fund for International Young Scientists [62050410350]
- Jiangsu Province College Graduate Research Innovation Program [KYLX16_0213]
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We report on a green, dual emissive quantum-dot light-emitting diode (QLED) using alumina-doped zinc oxide (AZO) to adjust the band offset between the cathode and QD-emitting layers, enhancing hole injection and slowing down electron injection from AZO to QD.
We report on a green, dual emissive quantum-dot light-emitting diode (QLED) using alumina (Al)-doped ZnO (AZO) to adjust the band offset between the cathode and QD-emitting layers. The dual emissive QLED structure was designed by enhancing the efficient hole injection/transfer and slowing down the electron injection/transfer from AZO to the QD. The QLEDs presented a maximum luminance of 9450 cd/m(2), corresponding to a power efficiency of 15.7 lm/W, a current efficiency of 25.5 cd/A, as well as a turn-on voltage of 2.3 V. It is worth noting that the performance of the dual emissive QLED is comparable to that of a single emissive QLED. Therefore, there is a 1.3-fold enhancement in the performance of the QLED based on the AZO cathode due to the balanced charge injection/transfer.
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