Related references
Note: Only part of the references are listed.Porous SiC electroluminescence from p-i-n junction and a lateral carrier diffusion model
Salman Bawa et al.
JOURNAL OF APPLIED PHYSICS (2021)
Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p-n junction diodes
Fumiya Nagasawa et al.
SCIENTIFIC REPORTS (2021)
Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications
Alessandro Meli et al.
MATERIALS (2021)
Development of a World Class Silicon Carbide Substrate Manufacturing Capability
J. D. Blevins
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING (2020)
Relation between work function and structural properties of triangular defects in 4H-SiC epitaxial layer: Kelvin probe force microscopic and spectroscopic analyses
Hong-Ki Kim et al.
NANOSCALE (2020)
Electronic energy model for single Shockley stacking fault formation in 4H-SiC crystals
A. Iijima et al.
JOURNAL OF APPLIED PHYSICS (2019)
Stabilization of point-defect spin qubits by quantum wells
Viktor Ivady et al.
NATURE COMMUNICATIONS (2019)
Investigation of Stacking Faults Introduced into 4H-SiC Crystals by Indentation
V. I. Orlov et al.
JOURNAL OF SURFACE INVESTIGATION (2017)
White Light Emission from Fluorescent SiC with Porous Surface
Weifang Lu et al.
SCIENTIFIC REPORTS (2017)
Bulk and epitaxial growth of silicon carbide
Tsunenobu Kimoto
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS (2016)
Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions
Chih-Hsien Cheng et al.
SCIENTIFIC REPORTS (2016)
Experimental evidence for mobile luminescence center mobility on partial dislocations in 4H-SiC using hyperspectral electroluminescence imaging
Joshua D. Caldwell et al.
APPLIED PHYSICS LETTERS (2013)
Photoluminescence of Frank-type defects on the basal plane in 4H-SiC epilayers
Isaho Kamata et al.
APPLIED PHYSICS LETTERS (2010)
Triple Shockley type stacking faults in 4H-SiC epilayers
Gan Feng et al.
APPLIED PHYSICS LETTERS (2009)
Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping
Gan Feng et al.
APPLIED PHYSICS LETTERS (2008)
Cathodoluminescence investigation of stacking faults extension in 4H-SiC
S. Juillaguet et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2007)
TEM study of defects generated in 4H-SiC by microindentations on the prismatic plane
A. Mussi et al.
PHILOSOPHICAL MAGAZINE LETTERS (2006)
Degradation of hexagonal silicon-carbide-based bipolar devices
M Skowronski et al.
JOURNAL OF APPLIED PHYSICS (2006)
Stacking faults in silicon carbide
HP Iwata et al.
PHYSICA B-CONDENSED MATTER (2003)
Experimental analysis and theoretical model for anomalously high ideality factors (n>>2.0) in AlGaN/GaN p-n junction diodes
JM Shah et al.
JOURNAL OF APPLIED PHYSICS (2003)
Transition from brittleness to ductility in SiC
P Pirouz et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2002)
Localized electronic states around stacking faults in silicon carbide -: art. no. 033203
H Iwata et al.
PHYSICAL REVIEW B (2002)
Luminescence from stacking faults in 4H SiC
SG Sridhara et al.
APPLIED PHYSICS LETTERS (2001)
Plastic behavior of 4H-SiC single crystals deformed at low strain rates
JL Demenet et al.
SCRIPTA MATERIALIA (2000)
Share Paper
