Effects of Oxygen Partial Pressure and Substrate Temperature on the Structure and Morphology of Sc and Y Co-Doped ZrO2 Solid Electrolyte Thin Films Prepared via Pulsed Laser Deposition

Scandium (Sc) and yttrium (Y) co-doped ZrO2 (ScYSZ) thin films were prepared on a SiO2-Si substrate via pulsed laser deposition (PLD) method. In order to obtain good quality thin films with the desired microstructure, various oxygen partial pressures (PO2) from 0.01 Pa to 10 Pa and substrate temperatures (T-s) from 25 & DEG;C to 800 & DEG;C were investigated. X-ray diffraction (XRD) patterns results showed that amorphous ScYSZ thin films were formed at room substrate temperature while cubic polycrystalline thin films were obtained at higher substrate temperatures (T-s = 200 & DEG;C, 400 & DEG;C, 600 & DEG;C, 800 & DEG;C). Raman spectra revealed a distinct Raman shift at around 600 cm(-1) supporting a cubic phase. However, a transition from cubic to tetragonal phase can be observed with increasing oxygen partial pressure. Photoemission spectroscopy (PES) spectra suggested supporting analysis that more oxygen vacancies in the lattice can be observed for samples deposited at lower oxygen partial pressures resulting in a cubic structure with higher dopant cation binding energies as compared to the tetragonal structure observed at higher oxygen partial pressure. On the other hand, dense morphologies can be obtained at lower PO2 (0.01 Pa and 0.1 Pa) while more porous morphologies can be obtained at higher PO2 (1.0 Pa and 10 Pa).

Automated summary

In this study, ScYSZ thin films were prepared on a SiO2-Si substrate using the pulsed laser deposition method, and the effects of different oxygen partial pressures and substrate temperatures on the film properties were investigated. The results showed that cubic polycrystalline films were obtained at higher oxygen partial pressures and substrate temperatures, while amorphous films were formed at lower oxygen partial pressures and substrate temperatures.