MBN explorer atomistic simulations of 855 MeV electron propagation and radiation emission in oriented silicon bent crystal: theory versus experiment

The method of relativistic molecular dynamics is applied for accurate computational modeling and numerical analysis of the channelling phenomena for 855 MeV electrons in bent oriented silicon (111) crystal. Special attention is devoted to the transition from the axial channelling regime to the planar one in the course of the crystal rotation with respect to the incident beam. Distribution in the deflection angle of electrons and spectral distribution of the radiation emitted are analyzed in detail. The results of calculations are compared with the experimental data collected at the MAinzer MIctrotron facility.

Automated summary

The relativistic molecular dynamics method is used for computational modeling and numerical analysis of channelling phenomena in silicon crystal with 855 MeV electrons. The focus is on the transition from axial to planar channelling regimes during crystal rotation, as well as detailed analysis of electron deflection angles and emitted radiation spectra. Results are compared with experimental data from the Mainzer Microtron facility.