Journal
EUROPEAN PHYSICAL JOURNAL PLUS
Volume 137, Issue 1, Pages -Publisher
SPRINGER HEIDELBERG
DOI: 10.1140/epjp/s13360-021-02268-0
Keywords
-
Categories
Funding
- European Commission through the N-LIGHT Project within the H2020-MSCA-RISE-2019 call [GA 872196]
- Deutsche Forschungsgemeinschaft [413220201]
- CINECA award under the ISCRA initiative
- CSN5-STORM experiment
Ask authors/readers for more resources
The relativistic molecular dynamics method is used for computational modeling and numerical analysis of channelling phenomena in silicon crystal with 855 MeV electrons. The focus is on the transition from axial to planar channelling regimes during crystal rotation, as well as detailed analysis of electron deflection angles and emitted radiation spectra. Results are compared with experimental data from the Mainzer Microtron facility.
The method of relativistic molecular dynamics is applied for accurate computational modeling and numerical analysis of the channelling phenomena for 855 MeV electrons in bent oriented silicon (111) crystal. Special attention is devoted to the transition from the axial channelling regime to the planar one in the course of the crystal rotation with respect to the incident beam. Distribution in the deflection angle of electrons and spectral distribution of the radiation emitted are analyzed in detail. The results of calculations are compared with the experimental data collected at the MAinzer MIctrotron facility.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available