4.8 Article

Gradient-Structuring Manipulation in Ni3S2 Layer Boosts Solar Hydrogen Production of Si Photocathode in Alkaline Media

Journal

ADVANCED ENERGY MATERIALS
Volume 12, Issue 2, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.202102865

Keywords

charge transfer; gradient-structuring; Ni; S-3; (2); Si photocathodes; solar hydrogen production

Funding

  1. National Natural Science Foundation of China [52002259, 51672183, 52102162]
  2. Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)

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A new approach integrating a gradient-structuring Ni3S2 layer into silicon photocathodes has been developed to enhance PEC activity in alkaline solutions, promoting charge separation and transport while increasing the photocurrent density. This strategy opens up new possibilities for engineering highly efficient and durable PEC devices.
Using silicon as a photocathode has long been considered as an ideal pathway toward cost-effective photoelectrochemical (PEC) solar hydrogen production. However, the trade-off between charge transfer efficiency and stability severely restricts the practical application of Si-based PEC devices in alkaline media. Herein, a facile thermo-electrodeposition process to integrate a gradient-structuring Ni3S2 (G-Ni3SxO2-x) layer to simultaneously protect and act as a catalyst in Si photocathodes in alkaline solutions is reported. The G-Ni3SxO2-x layer not only provides abundant active sites for the hydrogen evolution reaction but also promotes the charge separation and transport and mass transfer. Consequently, the as-fabricated Si photocathodes exhibit an excellent PEC activity under simulated AM1.5G illumination with a high onset potential of 0.39 V versus reversible hydrogen electrode (RHE) and a photocurrent density of -33.8 mA cm(-2) at 0 V versus RHE, outperforming the state-of-the-art p-Si based photocathodes. Moreover, the G-Ni3SxO2-x layer possesses a good interfacial contact with the Si substrate with negligible stress at the G-Ni3SxO2-x/Si interface, affording a good durability of over 120 h at >30 mA cm(-2) in alkaline media. This gradient-structuring strategy paves new way for engineering highly efficient and durable PEC devices.

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