Journal
IEEE PHOTONICS JOURNAL
Volume 13, Issue 6, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2021.3120797
Keywords
Chemical vapor deposition; GaN substrate; heterostructure; two-dimensional MoS2
Funding
- National Natural Science Foundation of China [61974056]
- Key Research and Development Program of Jiangsu Province [BE2020756]
- Natural Science Foundation of Jiangsu Province [BK20190576]
- Suzhou Science and Technology Project [SZS2020313]
- Fundamental Research Funds for Central Universities [JUSRP22032]
- Science and Technology Development Foundation of Wuxi [N20191002]
- Postgraduate Research & Practice Innovation Program of Jiangsu Province [KYCY20_1769]
- Undergraduate Innovation and Entrepreneurship Training Program of Jiangsu Province [202010295125Y]
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2D MoS2 was grown on AlGaN(GaN) substrates by CVD, forming 2D-3D MoS2-AlGaN(GaN) heterostructures. MoS2 crystals on AlGaN surface exhibit mixed and irregular shapes, while single-layer triangular MoS2 is mainly prepared on GaN surface. Both heterostructures exhibit indirect band gaps and broad-band light absorption performances.
Two-dimensional (2D) MoS2 was grown on AlGaN(GaN) substrates by chemical vapor deposition (CVD) and 2D-3D MoS2-AlGaN(GaN) heterostructures were formed. The MoS2 crystal on AlGaN surface has a mixed and irregular shape including single and multiple layers, while the single layer of triangular MoS2 is basically prepared on GaN surface. Combined with theoretical first-principles analysis, it is found the adsorption of AlGaN to MoS2 is lower than that of GaN, which leads to the deposition of MoS2 molecules on AlGaN surface, forming multilayer shapes. In addition, Both the MoS2-AlGaN(GaN) heterostructures exhibit indirect band gaps and broad-band light absorption performances.
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