Photo-elasto-thermodiffusion waves of semiconductor with ramp-type heating for electrons-holes-coupled model with initial stress

This article introduces mathematical, theoretical physics model when the interaction between the electrons and holes for the semiconductor medium is investigated. The model is studied in the generalized elasto-thermodiffusion (ETD) theory with the initial stress impact during the photothermal (PT) excitation. The governing equations give a detailed account of a one-dimensional (1D) thermoelastic (TD) and electronic(ED) deformation. The basic equations are obtained for the elastic medium without dispersion in a non-dimensional case. The hole charge carrier, displacement, thermal and plasma waves are coupled due to photo-thermal excitation. The Laplace transform method has been applied to solve the coupled principle governing equations. The boundary conditions are applied according to ramp-type heating to obtain the principle fields analytically in Laplace domain. Laplace transform inversion is used numerically to obtain the complete solutions in time domain for the basic fields. The effects of relaxation times according to the photo-thermoelasticity theories and the impact of initial stress are obtained graphically (2D and 3D plots) and discussed with comparing between silicon and germanium semiconductor materials.

Automated summary

This article introduces a mathematical, theoretical physics model for investigating the interaction between electrons and holes in a semiconductor medium. The model is studied in the context of the generalized elasto-thermodiffusion (ETD) theory with initial stress impact during photothermal (PT) excitation. The governing equations provide a detailed description of one-dimensional (1D) thermoelastic (TD) and electronic (ED) deformation. The basic equations are derived for an elastic medium without dispersion in a non-dimensional case. The coupling of hole charge carriers, displacement, thermal, and plasma waves is examined due to photo-thermal excitation. The Laplace transform method is used to solve the coupled governing equations, and boundary conditions are applied to obtain analytical solutions in the Laplace domain. The Laplace transform inversion is utilized to obtain complete solutions in the time domain for the basic fields. The effects of relaxation times and initial stress on the photo-thermoelasticity theories are graphically presented and compared between silicon and germanium semiconductor materials.