Transparent and conductive IZO films: Oxygen and discharge voltage controlled sputtering growth and properties

Zinc-doped indium oxide (IZO) film, as an important transparent conductive oxide, has attracted increasing attention in various scientific and engineering areas. In the present work, discharge-voltage and reactive-oxygen controlled IZO films were grown by magnetron sputtering and studied systematically. The microstructure, element distribution and chemical bonding of IZO films were investigated by X-Ray diffraction (XRD), transmission electron microscope (TEM), Energy Dispersive X-Ray Spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS). The optical and electrical properties of IZO films were studied by controlled oxygen and discharge voltage. The typical microstructure of IZO films with optimal optical and electric properties has been characterized. High discharge voltage and matched oxygen vacancies could promote the low resistivity of IZO films, which could be determined by the electronic concentration and mobility.

Automated summary

In this study, zinc-doped indium oxide (IZO) films were grown by magnetron sputtering with controlled discharge voltage and reactive oxygen, and their microstructure, element distribution, chemical bonding, optical and electrical properties were systematically investigated. The results showed that high discharge voltage and matched oxygen vacancies could promote the low resistivity of IZO films, which is determined by the electronic concentration and mobility.